Time‐resolved reflectivity of ion‐implanted silicon during laser annealing
نویسندگان
چکیده
منابع مشابه
Excimer Laser-Annealing of Amorphous Silicon Layers
This paper describes a one-dimensional model of excimer laser-annealing of amorphous silicon layers which are irradiated with a pulsed KrF excimer laser. For realisation of the model in COMSOL Multiphysics, the application mode heat transfer in solids is used. The model predicts a melt threshold for the energy density of the laser of Eth = 88.5 mJ/cm. It also predicts a linear increase of the m...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1978
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.90369